? semiconductor components industries, llc, 2014 may, 2014 ? rev. 0 1 publication order number: ngtg15n120fl2w/d NGTG15N120FL2WG igbt - field stop ii this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop ii trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for ups and solar applications. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? optimized for high speed switching ? 10 s short circuit capability ? these are pb?free devices typical applications ? solar inverter ? uninterruptible power inverter supplies (ups) ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 60 a gate?emitter voltage transient gate?emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 294 147 w short circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340al c g 15 a, 1200 v v cesat = 2.0 v e off = 0.37 mj e device package shipping ordering information NGTG15N120FL2WG t o?247 (pb?free) 30 units / ra il http://onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram g15n120fl2 aywwg g e c
NGTG15N120FL2WG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.51 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 15 a v ge = 15 v, i c = 15 a, t j = 175 c v cesat ? ? 2.00 2.40 2.40 ? v gate?emitter threshold voltage v ge = v ce , i c = 400 a v ge(th) 4.5 5.65 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 175 c i ces ? ? ? ? 0.4 4.0 ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 2640 ? pf output capacitance c oes ? 88 ? reverse transfer capacitance c res ? 50 ? gate charge total v ce = 600 v, i c = 15 a, v ge = 15 v q g ? 109 ? nc gate to emitter charge q ge ? 23 ? gate to collector charge q gc ? 51 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 600 v, i c = 15 a r g = 10 v ge = 0 v/ 15 v* t d(on) ? 64 ? ns rise time t r ? 104 ? turn?off delay time t d(off) ? 128 ? fall time t f ? 173 ? turn?on switching loss e on ? 1.20 ? mj turn?off switching loss e off ? 0.37 ? total switching loss e ts ? 1.57 ? turn?on delay time t j = 150 c v cc = 600 v, i c = 15 a r g = 10 v ge = 0 v/ 15 v* t d(on) ? 62 ? ns rise time t r ? 126 ? turn?off delay time t d(off) ? 134 ? fall time t f ? 262 ? turn?on switching loss e on ? 1.45 ? mj turn?off switching loss e off ? 0.76 ? total switching loss e ts ? 2.21 ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. *includes diode reverse recovery loss using ngtb15n120fl2wg.
NGTG15N120FL2WG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 8 0 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 175 150 125 100 75 50 25 0 i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 7 v ge = 13 v to 20 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 i c , collector current (a) 7 t j = ?55 c 9 v 8 v t j = 25 c t j = 150 c 200 v ge = 13 v to 20 v v ge = 20 v to 13 v 2457 ?75 ?50 ?25 2.5 2.0 1.5 1.0 0.5 0 i c = 15 a figure 6. typical capacitance v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 c, capacitance (pf) 100 c ies c oes c res 70 60 10 v 11 v 10 v 11 v 10 v 11 v 9 t j = 25 c 35 30 25 15 10 5 0 10,000 1000 100 1 45 0 40 45 12 13 14 3.0 40 35 30 20 15 10 5 0 45 40 35 30 20 15 10 5 0 45 40 35 30 20 15 10 5 0 25 25 11 10 6 3 1 20 10 25
NGTG15N120FL2WG http://onsemi.com 4 typical characteristics figure 7. typical gate charge q g , gate charge (nc) 60 40 20 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 100 10 v ce = 600 v v ge = 15 v i c = 15 a figure 8. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 15 a rg = 10 e off figure 9. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 15 a rg = 10 figure 10. switching loss vs. i c i c , collector current (a) 20 15 10 5 2.5 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off figure 11. switching time vs. i c i c , collector current (a) 1000 switching time (ns) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t f t d(off) 100 t f t d(off) 25 30 35 15 10 520253035 100 0.9 0.7 0.6 0.4 0.3 0.1 0 40 45 2.0 1.5 1.0 0.5 0 40 45 80 120 0.2 0.5 0.8
NGTG15N120FL2WG http://onsemi.com 5 typical characteristics t d(off) figure 12. switching loss vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c i c = 15 a 55 65 75 85 figure 13. switching time vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching time (ns) 1000 55 65 75 85 figure 14. switching loss vs. v ce v ce , collector?emitter voltage (v) 550 500 450 400 350 switching loss (mj) 800 600 v ge = 15 v t j = 150 c i c = 15 a rg = 10 figure 15. switching time vs. v ce v ce , collector?emitter voltage (v) switching time (ns) 1000 figure 16. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 17. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 1 t f t d(off) v ce = 600 v v ge = 15 v t j = 150 c i c = 15 a 100 v ge = 15 v t j = 150 c i c = 15 a rg = 10 t f 100 1.6 1.4 1.0 0.8 0.6 0.4 0.2 0 0.5 0.4 0.3 0.2 0.1 0 550 500 450 400 350 800 600 10k 10k 1.2 650 700 750 1.0 0.9 0.8 0.7 0.6 650 700 750
NGTG15N120FL2WG http://onsemi.com 6 typical characteristics figure 18. igbt die self?heating square?wave duty cycle transient thermal response on?pulse width (s) 1 0.1 0.01 0.0001 1 square?wave peak r(t) ( c/w) 0.00001 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.51 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.091186 0.003468 0.000001 0.066118 0.083897 0.201027 0.072182 0.015124 0.037692 0.049745 0.438100
NGTG15N120FL2WG http://onsemi.com 7 figure 19. test circuit for switching characteristics
NGTG15N120FL2WG http://onsemi.com 8 figure 20. definition of turn on waveform
NGTG15N120FL2WG http://onsemi.com 9 figure 21. definition of turn off waveform
NGTG15N120FL2WG http://onsemi.com 10 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtg15n120fl2w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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